Abstract

ZnO is a II-VI group semiconductor material with a large direct band. Zinc oxide film has been prepared by pulsed laser deposition (PLD) technique on to highly cleaned glass subst-rate. The as prepared film is characterized by optical absorption spectra and transmission spectra, X-Ray Defraction (XRD) pattern and Atomic Force Microscopy (AFM). The absorption spectra and transmission spectra of the ZnO film have been taken from (UV-VIS-NIR Spectrophotometer at room temperature. The absorption spectra are used to calculate the band gap of the ZnO film by Tauc 's relation for direct band gap material only The transmission Spectra are used to calculate the optical constants of the ZnO film by Manifacier's envelop method. The X-ray defraction pattern of ZnO is used to calculate crystallite size by Scherrer formula.